feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR20EY medium power, inverter use non-insulated type, glass passivation type CR20EY application inverter, dc choppers, pulse generator maximum ratings ?i t (av) ......................................................................... 20a ?v drm .................................................... 400v/600v/800v ?i gt ..........................................................................50ma symbol v rrm v rsm v drm v dsm parameter repetitive peak reverse voltage non-repetitive peak reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage unit v v v v 8 400 480 400 480 12 600 720 600 720 16 800 850 800 800 voltage class symbol i t (rms) i t (av) i tsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature mounting torque weight conditions commercial frequency, sine half wave, 180 conduction, t c =74 c 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current v d =1/2v drm , i tm =60a, i g =0.1a, t j =25 c, f=60hz typical value unit a a a a 2 s a/ m s w w v v a c c kgcm nm g ratings 31.5 20 300 380 100 5.0 0.5 10 5 2 C30 ~ +125 C30 ~ +125 30 2.94 20 lock washer nut 2 3 (22) 8 19 f 3.5 1.6 1 f 1.5 3 f 14 3.5 type name 2 3 2.1 11 14 36 25.5 4.4 m6 1 note: mica washer and spacer are provided only upon request. solderless terminal telegraph wire 2.63~6.64mm 2 ? ? ? outline drawing dimensions in mm 1 2 3 1
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3 cathode anode gate
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR20EY medium power, inverter use non-insulated type, glass passivation type test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t c =25 c, i tm =60a, instantaneous value t j =125 c, v d =2/3v drm t j =25 c, v d =6v, i t =0.5a t j =125 c, v d =1/2v drm t j =25 c, v d =6v, i t =0.5a t j =25 c, v d =100v, i t =15a, i g =0.1a i t =20a, v r =50v, v d =1/2v drm , t j =125 c, dv/dt=20v/ m s junction to case case to fin, greased unit ma ma v v/ m s v v ma m s m s c/w c/w typ. symbol i rrm i drm v tm dv/dt v gt v gd i gt t gt t q r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current turn-on time turn-off time thermal resistance contact thermal resistance limits min. 100 0.25 max. 6.0 6.0 2.5 3.0 50 10 15 1.0 0.40 electrical characteristics 320 240 200 120 40 0 80 160 280 10 0 23 5710 1 23 5710 2 44 1.0 2.5 3.0 3.5 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 1.5 2.0 25? t c = 125? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR20EY medium power, inverter use non-insulated type, glass passivation type 1.0 0 23 10 ? 5710 ? 23 5710 ? 23 5710 0 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 10 ? 23 10 1 5710 2 23 5710 3 23 5710 4 10 1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 v gt = 3v p gm = 5w v gd = 0.25v v fgm = 10v i fgm = 2a p g(av) = 0.5w i gt t j = 125? 25? 30? 23 10 0 5710 1 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (?) average on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/ w) time (s) gate characteristics gate voltage (v) gate current (ma) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) 80 60 30 20 10 70 50 40 0 0 32 16 4 8 12 20 24 28 q = 30 60 120 90 180 q 360 resistive, inductive loads 80 60 30 20 10 70 50 40 0 32 0 16 4 8 12 20 24 28 q = 30 60 120 90 180 q q 360 resistive loads 160 120 60 40 20 140 100 80 0 0 32 16 4 8 12 20 24 28 q 360 resistive, inductive loads q = 30 60 120 90 180 20 10 2 0 4 6 8 12141618 160 120 100 60 20 0 40 80 140 q = 180 90 q 360 resistive, inductive loads natural convection bx40-06 fin 120 120 t3 aluminum plate painted black and greased
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR20EY medium power, inverter use non-insulated type, glass passivation type 20 10 0 0 20 40 60 120 160 80 100 30 40 50 60 70 80 90 100 140 i t = 20a, tw = 50? v r = 50v, v d = 300v dv/dt = 20v/? typical example 80 60 30 20 10 70 50 40 0 0 16 4 8 12 20 24 28 32 dc q = 30 120 90 q 360 60 180 270 resistive, inductive loads 160 120 60 40 20 140 100 80 0 0 16 4 8 12 20 24 28 32 q q 360 q = 30 60 120 90 180 resistive loads 160 120 60 40 20 140 100 80 0 0 16 4 8 12 20 24 28 32 q q 360 q = 180 q = 90 resistive loads natural convection bx40-06 fin 120 120 t3 aluminum plate painted black and greased allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (rectangular wave) case temperature (?) average on-state current (a) allowable case temperature vs. average on-state current (single-phase full wave) case temperature (?) average on-state current (a) 160 120 60 40 20 140 100 80 0 0 16 4 8 12 20 24 28 32 dc q 360 q = 30 60 120 180 270 90 resistive, inductive loads turn-off time vs. junction temperature junction temperature (?) 100 (%) turn-off time (t j = t c ) turn-off time (t j = 125 ? ) 160 120 60 40 20 140 100 80 0 0 16 4 8 12 20 24 28 32 90 dc q = 180 bx40-06 fin 120 120 t3 aluminum plate painted black and greased q 360 resistive, inductive loads natural convection
feb.1999 mitsubishi semiconductor high-speed switching thyristor ? CR20EY medium power, inverter use non-insulated type, glass passivation type 40 20 0 0 48 12 24 32 16 20 60 80 100 120 140 160 180 200 28 t j = 125? v r = 50v di/dt = 20v/? v d = 1/2v drm typical example 40 20 0 ?0 0 20 80 120 40 60 60 80 100 120 140 160 180 200 100 typical example gate trigger current gate trigger voltage turn-off time vs. on-state current on-state current (a) 100 (%) turn-off time ( i t = ia ) turn-off time ( i t = 20a ) gate trigger current voltage vs. junction temperature junction temperature (?) 100 (%) gate trigger current voltage ( t j = t c ) gate trigger current voltage ( t j = 25 ? )
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